In this work, we suggest using that the intrinsic uncertainty in the conduction paths of resonant tunnelling diodes can behave as a source of randomness that can be integrated into current electronics to produce on-chip true random number generators. The N-shaped I-V characteristic of RTDs results in a two-level random voltage output when driven with current pulse trains. Electrical characterisation and randomness testing of the devices was conducted in order to determine the validity of the true randomness assumption. Based on the results obtained for the single RTD case, we suggest the possibility of using multi-well devices to generate N-state random switching devices for their use in random number generation or multi-valued logic devices.
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Ramón Bernardo Gavito, Fernando Jiménez Urbanos, Jonathan Roberts, James Sexton, Benjamin Astbury, Hamzah Shokeir, Thomas McGrath, Yasir J. Noori, Christopher S. Woodhead, Mohamed Missous, Utz Roedig, Robert J. Young, "N-state random switching based on quantum tunnelling," Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103541T (31 August 2017);