6 September 2017 Progress in the room temperature operation of GaAs-based lateral-type spin-PD in near-infrared wavelength region
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Abstract
A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and fabricated experimentally. The light impinged on the side of the device is refracted and shed directly on the backside of a spin-detecting Fe contact where spin-polarized carriers are generated in a thin InGaAs active layer and injected in the Fe contact through a crystalline AlOx tunnel barrier. Experiments are carried out at room temperature with photocurrent set up with circular polarization spectrometry, through which light-helicity-dependent photocurrent component, ΔI, is obtained with the spin detection efficiency F ≈ 0.4 %, where F is the ratio between ΔI and total photocurrent. This value is the highest reported so far for lateral-type spin-photodiodes. It is discussed that improving the quality of the p-InGaAs/x-AlOx/Fe interfaces will give rise to higher F values.
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R. C. Roca, R. C. Roca, N. Nishizawa, N. Nishizawa, K. Nishibayashi, K. Nishibayashi, H. Munekata, H. Munekata, } "Progress in the room temperature operation of GaAs-based lateral-type spin-PD in near-infrared wavelength region", Proc. SPIE 10357, Spintronics X, 103571C (6 September 2017); doi: 10.1117/12.2275577; https://doi.org/10.1117/12.2275577
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