7 September 2017 Shock waves in binary oxides memristors
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Abstract
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave, which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations.
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Federico Tesler, Shao Tang, Vladimir Dobrosavljević, Marcelo Rozenberg, "Shock waves in binary oxides memristors", Proc. SPIE 10357, Spintronics X, 103572L (7 September 2017); doi: 10.1117/12.2277977; https://doi.org/10.1117/12.2277977
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