8 September 2017 AuCl3 doping-induced conductive unstability for CVD-grown graphene on glass substrate
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Abstract
Graphene is a candidate material for next-generation high performance transparent conducting film (TCF) to replace indium tin oxide (ITO) materials. However, the sheet resistance of large area graphene obtained by the chemical vapor deposition (CVD) method is higher than other kinds of TCFs. The main strategies for improving the electrical conductivity of graphene films have been based on various doping treatments. AuCl3 is one of the most effective dopants. In this paper, we investigate the influence of AuCl3 doping on the conductive stability of CVD-grown graphene. Large area graphene film synthesized by CVD and transferred to glass substrates is taken as experimental sample. AuCl3 in nitromethane is used to dope the graphene films to improve the electrical conductivity. Another sample without doping is prepared for comparison. The resistances of graphene under periodic visible light irradiation with and without AuCl3 doping are measured. Results show that the resistances for all samples increase exponentially under lighting, while decrease slowly in an exponential form as well after the light is switched off. The relative resistance changes for undoped and doped samples are compared under 445nm light irradiation with 40mW/cm2, 60mW/cm2, 80mW/cm2, 100mW/cm2 in atmosphere and vacuum. The change rate and degree for doped graphene are greater than that of undoped graphene. It is evident from the experimental data that AuCl3 doping may induce conductive unstability for CVD-grown graphene on glass substrate.
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Jiaqing Wang, Jiaqing Wang, Xianming Liu, Xianming Liu, Xueying Cao, Xueying Cao, Peng Zhang, Peng Zhang, Xiaohua Lei, Xiaohua Lei, Weimin Chen, Weimin Chen, } "AuCl3 doping-induced conductive unstability for CVD-grown graphene on glass substrate", Proc. SPIE 10357, Spintronics X, 103573F (8 September 2017); doi: 10.1117/12.2271757; https://doi.org/10.1117/12.2271757
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