Integration of optically active Neodymium ions in Niobium devices (Nd:Nb): quantum memory for hybrid quantum entangled systems

O. M. Nayfeh; D. Chao; N. Djapic; P. Sims; B. Liu; S. Sharma; L. Lerum; M. Fahem; V. Dinh; S. Zlatanovic; B. Lynn; C. Torres; B. Higa; J. Moore; A. Upchurch; J. Cothern; M. Tukeman; R. Barua; B. Davidson; A. D. Ramirez; C. D. Rees; V. Anant; G. S. Kanter

doi:10.1117/12.2273012

29 August 2017 Integration of optically active Neodymium ions in Niobium devices (Nd:Nb): quantum memory for hybrid quantum entangled systems

Author Affiliations +

Proceedings Volume 10358, Quantum Photonic Devices; 103580E (2017) https://doi.org/10.1117/12.2273012
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb is implanted with Nd spanning 10-60 keV energy and 10¹³-10¹⁴ cm^-2 dose producing a 1- 3% Nd:Nb concentration as confirmed by energy-dispersive X-ray spectroscopy. Scanning confocal photoluminescence (PL) at 785 nm excitation are made and sharp emission peaks from the 4F_3/2 -< 4I_11/2 Nd³⁺ transition at 1064-1070 nm are examined. In contrast, un-implanted Nb is void of any peaks. Line-shapes at room temperature are fit with Lorentzian profiles with line-widths of 4-5 nm and 1.3 THz bandwidth and the impacts of hyperfine splitting via the metallic crystal potential are apparent and the co-contribution of implant induced defects. With increasing Nd from 1% to 3%, there is a 0.3 nm red shift and increased broadening to a 4.8 nm linewidth. Nd:Nb is photoconductive and responds strongly to applied fields. Furthermore, optically detected magnetic resonance (ODMR) measurements are presented spanning near-infrared telecom band. The modulation of the emission intensity with magnetic field and microwave power by integration of these magnetic Kramer type Nd ions is quantified along with spin echoes under pulsed microwave π-π/2 excitation. A hybrid system architecture is proposed using spin and photon quantum information storage with the nuclear and electron states of the Nd³⁺ and neighboring Nb atoms that can couple qubit states to hyperfine 7/2 spin states of Nd:Nb and onto NIR optical levels excitable with entangled single photons, thus enabling implementation of computing and networking/internet protocols in a single platform.

Citation Download Citation

O. M. Nayfeh, D. Chao, N. Djapic, P. Sims, B. Liu, S. Sharma, L. Lerum, M. Fahem, V. Dinh, S. Zlatanovic, B. Lynn, C. Torres, B. Higa, J. Moore, A. Upchurch, J. Cothern, M. Tukeman, R. Barua, B. Davidson, A. D. Ramirez, C. D. Rees, V. Anant, and G. S. Kanter "Integration of optically active Neodymium ions in Niobium devices (Nd:Nb): quantum memory for hybrid quantum entangled systems", Proc. SPIE 10358, Quantum Photonic Devices, 103580E (29 August 2017); doi: 10.1117/12.2273012; https://doi.org/10.1117/12.2273012

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years