Direct integration of an infrared-sensing quantum dot film and an organic light-emitting diode (OLED) offers pixel-free infrared imaging. However, the infrared-to-visible conversion efficiencies of the devices are low due to the low photon-to-electron conversion efficiency of the quantum dot photodetector. Here, we report a novel vertical infrared phototransistor with 105 % external quantum efficiency (EQE). By integrating a phosphorescent OLED with this phototransistor, an infrared-to-visible up-conversion light-emitting phototransistor with an EQE over 1,000% is demonstrated. In addition, by employing a ferroelectric gate insulator for the vertical transistor, a flexible low voltage non-volatile memory is demonstrated with 10 years of retention extrapolated.
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