Presentation
19 September 2017 Vertical organic transistors for optoelectronic and ferroelectric applications (Conference Presentation)
Hyeonggeun Yu, Franky So
Author Affiliations +
Abstract
Direct integration of an infrared-sensing quantum dot film and an organic light-emitting diode (OLED) offers pixel-free infrared imaging. However, the infrared-to-visible conversion efficiencies of the devices are low due to the low photon-to-electron conversion efficiency of the quantum dot photodetector. Here, we report a novel vertical infrared phototransistor with 105 % external quantum efficiency (EQE). By integrating a phosphorescent OLED with this phototransistor, an infrared-to-visible up-conversion light-emitting phototransistor with an EQE over 1,000% is demonstrated. In addition, by employing a ferroelectric gate insulator for the vertical transistor, a flexible low voltage non-volatile memory is demonstrated with 10 years of retention extrapolated.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyeonggeun Yu and Franky So "Vertical organic transistors for optoelectronic and ferroelectric applications (Conference Presentation)", Proc. SPIE 10364, Organic Sensors and Bioelectronics X, 103640Q (19 September 2017); https://doi.org/10.1117/12.2272527
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KEYWORDS
Infrared imaging

Infrared radiation

Transistors

External quantum efficiency

Organic light emitting diodes

Phototransistors

Infrared photography

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