15 March 1989 Modulation Spectroscopy For In Situ Characterization Of The Growth And Processing Of Semiconductors
Author Affiliations +
Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951010
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States
Abstract
This paper reviews some recent developments in the use of contactless modulation spectroscopy techniques for the in-situ characterization of the growth and processing of semiconductors. Photoreflectance (PR) measurements at 600°C on GaAs and Ga0.82A1 0.08As have demonstrated the potential of this method for in-situ monitoring during growth. Investigations PR, electron beam electroreflectance and differential reflectometry have shown that post growth (processing) information can be obtained about very thin Ga1AlxAs/GaAs epitaxial films, Ga Al As alloy composition, deep trap states, surface electric fields and carrier concentrations, lattice-mismatched strain, ion-implantation and annealing, and sputtering. In addition, characterization of semiconductor heterostructures can be performed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred H. Pollak, Fred H. Pollak, H. Shen, H. Shen, } "Modulation Spectroscopy For In Situ Characterization Of The Growth And Processing Of Semiconductors", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951010; https://doi.org/10.1117/12.951010
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top