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15 March 1989 Multichamber Integrated Deposition System For Silicon Based Dielectric Films
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Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989)
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States
This paper discusses the design and operation of a multichamber integrated processing system with in situ surface analysis capabilities. The system has been designed specifically for the deposition of silicon based dielectric thin films by the process of remote plasma-enhanced chemical-vapor deposition (Remote PECVD), and for the formation of microelectronic device heterostructures. In order to achieve these objectives the system includes the following: (1) two substrate-introduction load-lock chambers; (2) a semiconductor substrate processing chamber; (3) a dielectric deposition chamber, specifically configured for the remote PECVD process; (4) a surface analysis chamber including Reflection High Energy Electron Diffraction (RHEED) and Auger Electron Spectroscopy (AES); and (5) inter-chamber substrate transfer in a UHV compatible environment. We will discuss the deposition chamber in some detail and describe the way in which it is designed to meet the requirements for the Remote PECVD process reactions. We also describe an auxiliary deposition/analysis system, which provides both deposition process diagnostics, Mass Spectrometry (MS) and Optical Emission Spectroscopy (OES), and thin film deposition by Remote PECVD. These two systems taken together have provided a research capability for: (1) identifying the deposition process reactions; and (2) fabricating elementary microelectronic device structures, such as MOS and/or MIS capacitors.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerald Lucovsky, David V. Tsu, Gregory N. Parsons, and Sang S. Kim "Multichamber Integrated Deposition System For Silicon Based Dielectric Films", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989);

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