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15 March 1989 Use Of Raman Spectroscopy For The Characterization Of III-V Semiconductor Heterostructures
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Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951012
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States
Abstract
This paper is a review of the characterization of III-V heterostructures by Raman spectroscopy and a discussion of the potential of Raman spectroscopy as an in situ technique for the monitoring of epitaxial growth. Raman spectroscopy can be used at the high temperatures of epitaxial growth, and can yield information on the thickness, doping, composition, and quality of the growing epitaxial film. Raman measurements of 111-V materials at temperatures typical of those used in epitaxial growth are presented.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary W. Wicks "Use Of Raman Spectroscopy For The Characterization Of III-V Semiconductor Heterostructures", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); https://doi.org/10.1117/12.951012
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