23 August 2017 Characterizing the surface fluctuation of an epitaxial wafer by using a Shack-Hartmann wave-front sensor
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Abstract
By using a light-emitting diode as the probing light source and a Shack-Hartmann wave-front sensor to execute a relative measurement, we present a simple and sensitive method for measuring surface fluctuation of a nominally flat sample. We used an epitaxial wafer for test. The reflected wave front from the surface of the sample was first calibrated to be a planar surface. The surface fluctuation of the test sample could be estimated from the increment on the variance of the wave-front surface to its regression plane after the sample had been shifted by a small distance by using the Bienaymé formula.
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Pao-Keng Yang, Pao-Keng Yang, Yao-Kai Zhuang, Yao-Kai Zhuang, } "Characterizing the surface fluctuation of an epitaxial wafer by using a Shack-Hartmann wave-front sensor", Proc. SPIE 10373, Applied Optical Metrology II, 103730W (23 August 2017); doi: 10.1117/12.2273276; https://doi.org/10.1117/12.2273276
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