Kinetic Model For Material Structural Changes And Gradual Degradation In Semiconductor Lasers And Light Emitting Diodes

Yu. L. Khali; J. Salzman; R. Beserman

doi:10.1117/12.951091

5 July 1989 Kinetic Model For Material Structural Changes And Gradual Degradation In Semiconductor Lasers And Light Emitting Diodes

Yu. L. Khali, J. Salzman, R. Beserman

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Proceedings Volume 1038, 6th Mtg in Israel on Optical Engineering; (1989) https://doi.org/10.1117/12.951091
Event: Sixth Meeting of Optical Engineering in Israel, 1988, Tel Aviv, Israel

Abstract

A new semiphenomenological statistical kinetic model for changes in the material structure and gradual degradation in semiconductor lasers and light emitting diodes is presented. In this model, the injection of a non-equilibrium electron-hole plasma, increases the probability of struc-tural changes and reduces their effective activation energy due to the interaction of carriers with material atoms hopping over energy barriers. Arrhenius like expressions for the degradation rate with the pre-exponential factor and the effective activation energy as explicit functions of the material parameters are derived. Good agreement with experimental data is obtained.

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Yu. L. Khali, J. Salzman, and R. Beserman "Kinetic Model For Material Structural Changes And Gradual Degradation In Semiconductor Lasers And Light Emitting Diodes", Proc. SPIE 1038, 6th Mtg in Israel on Optical Engineering, (5 July 1989); https://doi.org/10.1117/12.951091

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