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5 July 1989 Tunneling And Noise Phenomena In HgCdTe Photodiodes
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Proceedings Volume 1038, 6th Mtg in Israel on Optical Engineering; (1989) https://doi.org/10.1117/12.951036
Event: Sixth Meeting of Optical Engineering in Israel, 1988, Tel Aviv, Israel
Abstract
The reverse breakdown characteristics of 8-12μm Hg1-x CdxTe photodiodes are experimentally measured and analyzed. Temperature dependence of the currents reveal that trap-assisted and direct band-to-band tunneling processes dominate the breakdown characteristics at low and high reverse bias regions respectively. The direct band-to-band characteristics are compared to theoretical predictions in implanted diodes on both gold-doped and undoped substrates. A good quantitative fit to theory is achieved based on experimental analysis of space charge density in the measured diodes depletion region using a C-V profiling technique. The direct tunneling characteristics also show empirical correlation with noise currents measured on gold-doped junctions.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Adar, D. Rosenfeld, and Y. Nemirovsky "Tunneling And Noise Phenomena In HgCdTe Photodiodes", Proc. SPIE 1038, 6th Mtg in Israel on Optical Engineering, (5 July 1989); https://doi.org/10.1117/12.951036
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