21 September 2017 Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices
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Abstract
A very simple and inexpensive method for growing β-Ga2O3 films by heating GaAs wafers at high temperature in a furnace was found to contribute to large-area, high-quality β-Ga2O3 nanoscale thin films as well as nanowires depending on the growth conditions. We present the material characterization results including the optical band gap, Schottky barrier height with metal (gold), field ionization and photoconductance of β-Ga2O3 film and nanowires.
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Howard Mao, Howard Mao, Badriyah Alhalaili, Badriyah Alhalaili, Ahmet Kaya, Ahmet Kaya, Daniel M. Dryden, Daniel M. Dryden, Jerry M. Woodall, Jerry M. Woodall, M. Saif Islam, M. Saif Islam, } "Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 103810B (21 September 2017); doi: 10.1117/12.2278843; https://doi.org/10.1117/12.2278843
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