Presentation + Paper
21 September 2017 Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices
Howard Mao, Badriyah Alhalaili, Ahmet Kaya, Daniel M. Dryden, Jerry M. Woodall, M. Saif Islam
Author Affiliations +
Abstract
A very simple and inexpensive method for growing β-Ga2O3 films by heating GaAs wafers at high temperature in a furnace was found to contribute to large-area, high-quality β-Ga2O3 nanoscale thin films as well as nanowires depending on the growth conditions. We present the material characterization results including the optical band gap, Schottky barrier height with metal (gold), field ionization and photoconductance of β-Ga2O3 film and nanowires.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Howard Mao, Badriyah Alhalaili, Ahmet Kaya, Daniel M. Dryden, Jerry M. Woodall, and M. Saif Islam "Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 103810B (21 September 2017); https://doi.org/10.1117/12.2278843
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Gallium

Nanowires

Gallium arsenide

Scanning electron microscopy

Oxidation

Arsenic

Nanostructures

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