23 August 2017 Simulation and performance comparison of Si and SiC-based interleaved boost converter
Author Affiliations +
Abstract
In this paper, simulation and performance comparison of Si and SiC based interleaved boost converter is presented. Wide bandgap devices such as silicon carbide and gallium nitride are desirable and recommended in high-power applications because of their capability of operating under high temperature, high switching frequency, and high voltage with reduced switching losses. The main advantage of using SiC materials is the ability to raise the switching frequency which will reduce the size. However, their cost is high compared to Si. In this paper, 60V input voltage is used to get 120V output voltage under 100 KHz switching frequency and 0.5 duty cycle. With the help of LTSpice software, an efficiency comparison between silicon and silicon carbide by considering interleaved boost converter are simulated and studied.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasser Almalaq, Yasser Almalaq, Ayoob Alateeq, Ayoob Alateeq, Mohammad Matin, Mohammad Matin, } "Simulation and performance comparison of Si and SiC-based interleaved boost converter", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 103810C (23 August 2017); doi: 10.1117/12.2273481; https://doi.org/10.1117/12.2273481
PROCEEDINGS
5 PAGES


SHARE
Back to Top