23 August 2017 Design of a high-performance cascaded boost converter with SiC power devices for photovoltaic applications
Author Affiliations +
Abstract
This paper presents a positive output cascaded boost converter design based on wide bandgap power devices for photovoltaic (PV) applications. The objective is to enhance the converter’s performance and efficiency. The converter with SiC MOSFET devices is discussed and compared to a conventional cascaded boost converter based on Silicon (Si) devices. A 205 W cascaded boost converter with an input voltage of 26.6 V and an output voltage of 400 V is simulated to examine the switching behavior and energy loss of each power device. Converter performance with these two power devices is analyzed in terms of total power loss and efficiency at high switching frequencies and loading conditions. SiC power devices in the cascaded converter set-up perform better with minimized switching loss under a wide range of switching frequency conditions. The results show that the cascaded converter with SiC devices significantly reduces total power loss and improves the overall efficiency.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Saleh S. Alharbi, Saleh S. Alharbi, Ali M. S. Al-bayati, Ali M. S. Al-bayati, Salah S. Alharbi, Salah S. Alharbi, Mohammad Matin, Mohammad Matin, } "Design of a high-performance cascaded boost converter with SiC power devices for photovoltaic applications", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 103810I (23 August 2017); doi: 10.1117/12.2277181; https://doi.org/10.1117/12.2277181
PROCEEDINGS
7 PAGES


SHARE
Back to Top