23 August 2017 Rapid silicon carbide micro-crystal growth by high power CO2 laser
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Abstract
This paper presents an ultra-fast growth of silicon carbide crystal with the size up to 50 μm from SiC nanopowders. By using a CO2 laser with a power of 30W to heat the silicon carbide nanopowders in a vacuum chamber, the nanopowders tends to congregate together to form larger particles first. Following the slow cooling process, the congregate formation would further transform to final SiC micro-crystals. The two types of final products grown from quenching process and slow cooling process were analyzed by SEM. The lattice structure of final SiC micro-crystal was determined to be hexagonal structure according to the XRD analysis.
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Haonan Zhou, Chang-Jiang Chen, Wenbin Zhu, Ju-Hung Chao, Stuart (Shizhuo) Yin, "Rapid silicon carbide micro-crystal growth by high power CO2 laser", Proc. SPIE 10382, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI, 103820L (23 August 2017); doi: 10.1117/12.2276513; https://doi.org/10.1117/12.2276513
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