9 November 2017 Front Matter: Volume 10383
This PDF file contains the front matter associated with SPIE Proceedings Volume 10383, including the Title Page, Copyright information, Table of Contents, Introduction, and Conference Committee listing.
Razeghi, Baranov, Pavlidis, and Zavada: Front Matter: Volume 10383

The papers in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. Additional papers and presentation recordings may be available online in the SPIE Digital Library at SPIEDigitalLibrary.org.

The papers reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.

Please use the following format to cite material from these proceedings:

Author(s), “Title of Paper,” in Terahertz Emitters, Receivers, and Applications VIII, edited by Manijeh Razeghi, Alexei N. Baranov, Dimitris Pavlidis, John M. Zavada, Proceedings of SPIE Vol. 10383 (SPIE, Bellingham, WA, 2017) Seven-digit Article CIID Number.

ISSN: 0277-786X

ISSN: 1996-756X (electronic)

ISBN: 9781510612235

ISBN: 9781510612242 (electronic)

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Numbers in the index correspond to the last two digits of the seven-digit citation identifier (CID) article numbering system used in Proceedings of SPIE. The first five digits reflect the volume number. Base 36 numbering is employed for the last two digits and indicates the order of articles within the volume. Numbers start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B…0Z, followed by 10-1Z, 20-2Z, etc.

Avetisyan, Yuri H., 0A

Carras, M., 0D

Ciano, C., 0P

Citrin, D. S., 0Q

Consejo, C., 0C

Del Re, E., 0P

Dong, J., 0Q

Dvoretskii, S. A., 0C

Feng, Jinjun, 03

Flammini, M., 0P

Gamzina, Diana, 03

Gavrielides, A., 0D

Gavrilenko, V. I., 0C

Giliberti, V., 0P

Gonzalez, Michelle, 03

Grillot, F., 0D

Guo, Xiaohu, 0M

Himes, Logan, 03

Huang, Xuejiao, 03

Hurd, Christian, 03

Jabbour, Charles, 0N

Jokubauskis, Domas, 0S

Kašalynas, Irmantas, 0S

Knap, W., 0C

Kong, Lingqin, 0M

Krishtopenko, S. S., 0C

Letizia, Rosa, 03

Li, Hanyan, 03

Li, Xiang, 03

Locquet, A., 0Q

Lu, Tielin, 0M

Luhmann, Neville C., 03

Makaryan, Armen, 0A

Marcinkiewicz, M., 0C

Melis, M., 0Q

Mikhailov, N. N., 0C

Ming, Xianshun, 0V

Minkevičius, Linas, 0S

Morozov, S. V., 0C

Newell, T. C., 0D

Orlita, M., 0C

Ortolani, M., 0P

Padilla, Willie J., 0V

Pan, Pan, 03

Paoloni, Claudio, 03

Pontecorvo, E., 0P

Račiukaitis, Gediminas, 0S

Razeghi, Manijeh, 05

Reklaitis, Antanas, 0S

Ruffenach, S., 0C

Seliuta, Dalius, 0S

Smirnov, D., 0C

Sun, Liqun, 0V

Tadevosyan, Vahe, 0A

Tamošiūnas, Vincas, 0S

Tang, Ye, 03

Teppe, F., 0C

Torres, J., 0C

Trofimov, Vyacheslav A., 0H

Valušis, Gintaras, 0S

Varentsova, Svetlana A., 0H

Venckevičius, Rimvydas, 0S

Voisiat, Bogdan, 0S

Wang, Yuejing, 0N

Wu, Tong, 0E

Yasui, Takeshi, 0J

Yu, Xiaomei, 0E

Zagursky, Dmitry Yu., 0H

Zakharova, Irina G., 0H

Zhang, Cunlin, 0E

Zhang, Jingshui, 0M

Zhang, LiangLiang, 0E

Zhang, Shijing, 0E, 0M

Zhao, Hang, 0E

Zhao, Yuejin, 0E, 0M

Zheng, Yuan, 03

Zide, Joshua M. O., 0N

Conference Committee

Conference Chairs

  • Manijeh Razeghi, Northwestern University (United States)

  • Alexei N. Baranov, Université Montpellier 2 (France)

  • Dimitris Pavlidis, National Science Foundation (United States)

  • John M. Zavada, Polytechnic Institute of New York University (United States)

Program Track Chairs

  • Shizhuo Yin, The Pennsylvania State University (United States)

    Ruyan Guo, The University of Texas at San Antonio (United States)

Conference Program Committee

  • Maria Amanti, Université Paris 7-Denis Diderot (France)

  • Richard D. Averitt, University of California, San Diego (United States)

  • Stefano Barbieri, Université Paris 7-Denis Diderot (France)

  • Robert J. Grasso, EOIR Technologies (United States)

  • Sven Höfling, University of St. Andrews (United Kingdom)

  • Hiroshi Ito, Kitasato University (Japan)

  • Wojciech Knap, Université Montpellier 2 (France)

  • Juliette Mangeney, Ecole Normale Supérieure (France)

  • Oleg Mitrofanov, University College London (United Kingdom)

  • Gaël Mouret, Université du Littoral Côte d’Opale (France)

  • Naoki Oda, NEC Corporation (Japan)

  • Mauro F. Pereira, Sheffield Hallam University (United Kingdom)

  • Edik U. Rafailov, Aston University (United Kingdom)

  • Pascale Roy, Synchrotron SOLEIL (France)

  • Gaetano Scamarcio, Universitá degli Studi di Bari Aldo Moro (Italy)

  • Carlo Sirtori, Université Paris 7-Denis Diderot (France)

  • Zachary D. Taylor, University of California, Los Angeles (United States)

  • Roland Teissier, Université Montpellier 2 (France)

  • Vladimir V. Vaks, Institute for Physics of Microstructures (Russian Federation)

  • Gintaras Valušis, Center for Physical Sciences and Technology (Lithuania)

  • Miriam S. Vitiello, Consiglio Nazionale delle Ricerche (Italy)

  • Benjamin S. Williams, University of California, Los Angeles (United States)

Session Chairs

  • 1 Generation of THz Radiation

    Alexei N. Baranov, University Montpellier (France)

    Mauro F. Pereira, Sheffield Hallam University (United Kingdom)

  • 2 QCL THz Sources

    Edik U. Rafailov, Aston University (United Kingdom)

  • 3 Novel Concepts and Materials for THz Technology

    Mikhail A. Belkin, The University of Texas at Austin (United States)

    Gintaras Valušis, Center for Physical Sciences and Technology (Lithuania)

  • 4 Fundamentals of Generation, Detection, and Propagation of THz

    Waves I

    Dmitry Turchinovich, Max-Planck-Institut für Polymerforschung (Germany)

    Lyubov V. Titova, Worcester Polytechnic Institute (United States)

  • 5 THz Spectroscopy

    Diana Gamzina, SLAC National Accelerator Laboratory (United States)

  • 6 Fundamentals of Generation, Detection, and Propagation of THz

    Waves II

    Frédéric Grillot, Télécom ParisTech (France)

    Robert J. Grasso, EOIR Technologies (United States)

  • 7 ТHz Imaging

    Manijeh Razeghi, Northwestern University (United States)

    John M. Zavada, Polytechnic Institute of New York University (United States)


Why do we need THz and where are we now?

The terahertz (THz) spectral range (1–10 THz) is bridging the gap between the visible/infrared photonics and the high frequency electronics, where both disciplines are stuck by their marginal issues. The characteristic feature of THz waves is their ability to penetrate through dielectric materials, such as plastics, ceramics, wood or textiles, which gives a possibility for nondestructive examination highly demanded for security systems and other remote control equipment. Moreover, they can be used for identification of hidden substances because many materials exhibit specific absorption features at THz frequencies. The THz radiation is especially attractive for analysis of biological objects since, due to its small photon energy, it does not modify the inspected item and is therefore absolutely safe. Besides the unique features of THz imaging this technology offers new horizons in communications. Compared with existing standards, a much larger bandwidth, ranging from tens of GHz up to several THz depending on the transmission distance, can be achieved in this frequency region. Realization of the high potential of the THz technology requires adequate instrumentation: radiation sources, detectors, and relevant components such as lenses, mirrors, filters, coating, modulators, etc. This conference deals with a wide range of topics covering all the issues related to the THz waves, from theory to components and applications.

A source of radiation is the main component of any spectroscopic or communication system. THz sources can be organized as pulsed or continuous (as for the operation), narrowband or broadband (spectral coverage), coherent or incoherent (radiation properties), or the working principle. Sources generating THz (directly) via oscillation in electronic (solid-state based or vacuum-based) or in optical devices (e.g. lasers) are denoted as direct. On the other hand, sources generating THz via nonlinear mixing or conversion of electromagnetic pump waves in a nonlinear medium or in medium with accelerating electrons are called indirect.

Vacuum electron devices are the most ancient emitters of THz radiation. Such sources are still widely used in research laboratories due to the high power and room temperature operation. A backward oscillator emitting up to 1 W of THz optical power was presented at the conference. This paper (SPIE number 10383-2, Gamzina, et al) describes the outstanding technological effort to design and realize a backward wave oscillator with 0.346 GHz operating frequency to be employed in fusion plasma diagnostics. However, due mainly to the large footprint, the vacuum electron devices are not well suited for commercial use. Realization of on-chip, compact and mass producible THz sources will lead this technology to make a widespread social impact.

Quantum cascade lasers (QCLs) are partially filling the THz gap of coherent sources, although cryogenic cooling and very limited tunability have restricted the number of spectroscopic applications. Room temperature operation is one of the main characteristics required in semiconductor lasers for mass scale applications. Unfortunately, THz QCLs have not yielded the room temperature action yet. The maximum operating temperature reported till date is ~200 K for pulsed operation and 129 K for CW operation without using strong magnetic field. On the other hand, it is possible to fabricate RT THz emitters based on difference frequency generation (DFG) exploiting built-in nonlinear properties of mature high power mid-IR QCLs. This approach has been successfully employed by the Center for Quantum Devices directed by Prof. M. Razeghi in Northwestern University to demonstrate the best-todate QCL-based THz sources operating at room temperature. These DFG-QCL THz emitters exhibit RT optical powers up to 2 mW in pulsed mode and 14 μW in the continuous wave regime. Such sources, as well as their application for frequency comb spectroscopy, have been reviewed in the keynote paper of Prof. Razeghi.

Compact solutions for spectroscopic solid-state based THz imaging systems are considered in several conference papers. To achieve compact and robust devices, a wide range of III-V semiconductors based materials for 1.55 μm THz photoconductive switches have been grown and optimized using various approaches by a research group from the University of Delaware. Relevant properties for the state-of-the-art materials for these devices including bandgap energy, dark resistance, carrier mobility, and carrier lifetime are discussed in this paper. Another paper on compact components for THz imaging is presented by the Center for Physical Sciences and Technology (Vilnius, Lithuania). Pulsed THz emitters based on a δ-doped p-i-n-i GaAs/AlxGa1−xAs heterostructure, on-chip integrated elements of diffractive optics and bow-tie-shaped InGaAs-based THz detectors were demonstrated and employed for direct and homodyne imaging of low absorbing objects.

Despite the fast advance in recent years, the potential of THz technology is still under-exploited due to the lack of practical devices for generation and detection of THz waves. We hope that the conference stimulates progress in this field and some new idea how to make THz technology as efficient and easy to use as near infrared one can be found in this volume.

Manijeh Razeghi

Alexei N. Baranov

Dimitris Pavlidis

John M. Zavada

© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
"Front Matter: Volume 10383", Proc. SPIE 10383, Terahertz Emitters, Receivers, and Applications VIII, 1038301 (9 November 2017); doi: 10.1117/12.2296952; https://doi.org/10.1117/12.2296952

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