18 November 1989 Band Dege Structure Of Pb1-XSnxTe Doped With Indium By Far-Infrared Magnetoplasma Reflection Method
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Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978511
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
Far-infrared magnetoplasma reflection spectra of In doped Pb1-xSnxTe are measured across the band inversion region (0.15<x<0.40). From the spectra, the temperature dependeces of photo-carrier concentrations and cyclotron masses are determined below 20K, where large photoconduction is observed. By using the two bands theory with observed masses and carrier concentrations, it is found that the band edge masses become much heavior even by 1% In doping, while the band gaps do not change appreciably as compared with those of undoped Pb1-xSnxTe.
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S. Takaoka, S. Shimomura, H. Takahashi, K. Murase, "Band Dege Structure Of Pb1-XSnxTe Doped With Indium By Far-Infrared Magnetoplasma Reflection Method", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978511; https://doi.org/10.1117/12.978511
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