18 November 1989 Effects Of Annealing On The Electrical Properties Of P-Cd0.2Hg0.8Te Grown By LPE
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Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978509
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
The effects of annealing on the electrical properties of Cd0.2Hg08Te(CMT) grown by liquid phase epitaxy technique are investigated. We show that the annealing at the temperature as low as 250°C under the vacuum condition is superior to the conventional technique, annealing at the temperature higher than 400°C under Hg over-pressure, to obtain high quality p-CMT layers. Hole concentration and mobility of the resultant p-CMT are 7.2x1015cm-3 and 787 cm2/V•sec, respectively.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Yasumura, K. Sato, Y. Yoshida, Y. Komine, "Effects Of Annealing On The Electrical Properties Of P-Cd0.2Hg0.8Te Grown By LPE", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978509; https://doi.org/10.1117/12.978509
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