18 November 1989 Far Infrared Absorption Spectra Of Amorphous (As2S3)- (Sb2S3) Semiconductors And The Spatial Charge Fluctuation
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Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978508
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
Far infrared absorption spectra of amorphous (As2S3) 1-x(Sb2S3)x system (x=0.0-0.6) were measured in the wavenumber region 7-25 cm-' with Lamellar grating far infrared Fourier Transform Spectrometer, and the spatial fluctuation of charges and its correlation range were estimated with charge fluctuation model. The charge fluctuation of (As2S3)1-x(Sb2S3)x system increases with Sb2S3 concentration x. On the other hand, the correlation length of the charge fluctuation decreases from 7 A to 4.5 A with an increase in x. As a result, it can be found that the medium range order of As2S3 changes drastically with an increase in Sb2S3 concentration x.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Matsuishi, T. Anzaki, S. Onari, T. Arai, "Far Infrared Absorption Spectra Of Amorphous (As2S3)- (Sb2S3) Semiconductors And The Spatial Charge Fluctuation", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978508; https://doi.org/10.1117/12.978508
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