18 November 1989 Far-Infrared Cyclotron Resonance Studies Of Impurity Scattering In Ge, GaAs And InSB
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Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978533
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
Contribution of impurity scattering to the electron cyclotron resonance linewidth (inverse relaxation time) has been studied in the quantum limit, after subtracting the contribution of phonon scattering, for typical semiconductors Ge, GaAs and InSb. To our surprise, dependence of inverse relaxation time on temperature, magnetic field and impurity concentration is the same for neutral and ionized impurities.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiromi Kobori, Tyuzi Ohyama, Eizo Otsuka, "Far-Infrared Cyclotron Resonance Studies Of Impurity Scattering In Ge, GaAs And InSB", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978533; https://doi.org/10.1117/12.978533
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