18 November 1989 Millimeter And Submillimeter Wave Optical And Dielectric Properties Of Single Crystal High Purity Silicon
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Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978510
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
The single crystal silicon is a monatomic material. The lattice vibration absorption peaks appear around 18,000 GHz (600 wavenumber per centimeter). The only other absorption process present in the entire millimeter and submillimeter wave region is the free carrier absorption which centers around 60 GHz (5 mm in wavelength, 2 wavenumber per centimeter). The free carrier absorption can be reduced in two way: by making the material ultra pure or by introducing deep trap impurities while manufacturing. The resistivity increases in both cases. Complex refractive index, complex dielectric permittivity and loss tangent spectra on several hyperpure silicon specimens will be presented as a function of frequency and resistivity and compared.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohammed Nurul Afsar, Mohammed Nurul Afsar, } "Millimeter And Submillimeter Wave Optical And Dielectric Properties Of Single Crystal High Purity Silicon", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978510; https://doi.org/10.1117/12.978510
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