Parametric Analysis Of Galnas Devices For Mm-Wave Applications

A. R. Jha

doi:10.1117/12.978305

18 November 1989 Parametric Analysis Of GalnAs Devices For MM-Wave Applications

A. R. Jha

Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978305
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States

Abstract

Metal-Insulator-Semiconductor FETs (MISFETs) when fabricated from GalnAs semiconductor material offer significant performance improvement at mm-wave frequencies. Higher electron velocity, power-added efficiency, device stability, transconductance and resistance to ionizing radiation are the outstanding features of these devices. Significant improvements in gain-bandwidth product, AM/PM performance, and third-order intermodulation distortion make GalnAs devices attractive for communication and radar equipment.

Citation Download Citation

A. R. Jha "Parametric Analysis Of GalnAs Devices For MM-Wave Applications", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978305

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