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18 November 1989 Quantum Limit Electron-Phonon Scattering Studies In Semiconductors By Far-Infrared Cyclotron Resonance
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Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978532
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
Extensively systematic studies of the cyclotron resonance linewidth in the quantum limit have been performed on electron-phonon scattering in basic semiconductors ( Ge, CdS, GaAs ). Far-infrared (119 to 513 μm) laser cyclotron resonance experiments have been carried out in photo-excitation by pulsed band gap light or in thermal excitation. We present the temperature and magnetic field dependences of cyclotron resonance linewidth for electron-phonon scattering in the quantum limit with respect to various samples.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Kobori, T. Ohyama, and E. Otsuka "Quantum Limit Electron-Phonon Scattering Studies In Semiconductors By Far-Infrared Cyclotron Resonance", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978532
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