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18 November 1989 Submillimeter Wave Emission From Semiconductor Superlattices
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Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978505
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
Far infrared emission due to electronic transitions between subbands in semiconductor superlattices is observed for the first time. The electrons are excited by applying an electric field in the plane of the layers. The generated radiation is coupled out of the sample by a metallic grating on the surface.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Helm, E. Colas, P. England, F. DeRosa, and S. J . Allen Jr. "Submillimeter Wave Emission From Semiconductor Superlattices", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978505
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