18 November 1989 Submillimeter Wave Low Temperature Admittance Of N-GaAs AND InP Diode Structures Using Transport Analysis
Author Affiliations +
Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978442
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
Numerical simulation results for n+nn+ GaAs and InP diode structures in the 1-3 THz frequency range are presented. Cryogenic temperatures from 4 through about 77 K are examined to obtain the two-terminal admittance. Earlier work has suggested possible negative differential conductivity (NDC) at or below 4.2 K, but no consistent NDC above 77 K. Implications of the Monte Carlo data for generation of submillimeter waves at these intermediate temperatures is discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Clifford M. Krowne, "Submillimeter Wave Low Temperature Admittance Of N-GaAs AND InP Diode Structures Using Transport Analysis", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978442; https://doi.org/10.1117/12.978442
PROCEEDINGS
2 PAGES


SHARE
RELATED CONTENT

InP Millimeter Diode Oscillators And Amplifiers
Proceedings of SPIE (October 22 1982)
Terahertz pulse detection by the GaAs Schottky diodes
Proceedings of SPIE (June 04 2010)
Noise Measurements In Self-Oscillating Mixers
Proceedings of SPIE (October 22 1982)
MeV Implantation In The III-V's
Proceedings of SPIE (April 09 1985)

Back to Top