The Dependence Of Gaas Schottky Diode Noise On Dry Etching Damage

T. Suzuki; T. Iinuma; K. Mizuno

doi:10.1117/12.978410

18 November 1989 The Dependence Of Gaas Schottky Diode Noise On Dry Etching Damage

T. Suzuki, T. Iinuma, K. Mizuno

Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978410
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States

Abstract

The noise of GaAs Schottky diode caused by dry etching damage has been studied. The number of traps near the Pt/GaAs interface increases with the damage, and this greatly increases flicker noise. These experimental results can be explained by a theoretical calculation.

Citation Download Citation

T. Suzuki, T. Iinuma, and K. Mizuno "The Dependence Of Gaas Schottky Diode Noise On Dry Etching Damage", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978410

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