18 November 1989 Time Dependent Simulation Of The Quantum Well Injection Transit Time Diode
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Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978302
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
The quantum well injection transit time (QWITT) diode is a transit time device that couples a heterojunction barrier structure as an injector with a depleted epitaxial drift region, as shown in Figure 1. The device, which was originally proposed by Kesan et al. [1], is a promising solid state source with potential for operation at the higher millimeter wave frequencies. Both large and small signal analyses of the device have shown that the specific negative resistance due to transit time effects from the drift region are on the order of, or are significantly greater than, the intrinsic negative differential negative resistance of the quantum well double barrier diode. This paper presents results of a large signal simulation which uses a full set of semiconductor time dependent transport equations, and solves self-consistently for the electric field as well as for the electron and hole populations throughout the device.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. R. Miller, D. R. Miller, V. P. Kesan, V. P. Kesan, R. L. Rogers, R. L. Rogers, C. M. Maziar, C. M. Maziar, D. P. Neikirk, D. P. Neikirk, } "Time Dependent Simulation Of The Quantum Well Injection Transit Time Diode", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978302; https://doi.org/10.1117/12.978302
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