Te inclusions (1-20 micron diameter), typical of melt-grown CdTe and Cd(Zn)Te crystals, were observed in the ingots by infrared transmission microscopy. The measured X-ray diffraction patterns showed that all compositions are found to be in a single phase. Using current-voltage (I-V) measurements, the resistivity of the samples from each ingot was estimated to be about 105 Ohm·cm. The optical transmission analysis demonstrated that the band-gap of the investigated ingots increased from 1.77 to 1.88 eV with an increase of the MnTe content from 20 to 30 mol. %.
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V. Kopach, O. Kopach, L. Shcherbak, P. Fochuk, Svitlana Filonenko, A. E. Bolotnikov, R. B. James, "Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots," Proc. SPIE 10392, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX, 1039214 (29 August 2017);