8 September 2017 Measuring silicon pore optics
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Abstract
While predictions based on the metrology (local slope errors and detailed geometrical details) play an essential role in controlling the development of the manufacturing processes, X-ray characterization remains the ultimate indication of the actual performance of Silicon Pore Optics (SPO). For this reason SPO stacks and mirror modules are routinely characterized at PTB’s X-ray Pencil Beam Facility at BESSY II. Obtaining standard X-ray results quickly, right after the production of X-ray optics is essential to making sure that X-ray results can inform decisions taken in the lab. We describe the data analysis pipeline in operations at cosine, and how it allows us to go from stack production to full X-ray characterization in 24 hours.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Giuseppe Vacanti, Nicolas Barrière, Marcos Bavdaz, Abdelhakim Chatbi, Maximilien Collon, Daniëlle Dekker, David Girou, Ramses Günther, Roy van der Hoeven, Michael Krumrey, Boris Landgraf, Peter Müller, Swenja Schreiber, Mark Vervest, Eric Wille, "Measuring silicon pore optics", Proc. SPIE 10399, Optics for EUV, X-Ray, and Gamma-Ray Astronomy VIII, 103990N (8 September 2017); doi: 10.1117/12.2274357; https://doi.org/10.1117/12.2274357
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