30 August 2017 Antimonide-based resonant tunneling photodetectors for mid infrared wavelength light detection
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We present antimonide-based resonant tunneling photodetectors with GaSb/AlAsSb double barrier structures and pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. Due to the incorporation of GaInSb and GaAsSb prewell emitters, room temperature resonant tunneling with peak-to-valley current ratios of up to 2.4 are shown. The room temperature operation is attributed to the enhanced Γ-Lvalley energy separation and consequently a re-population of the Γ-conduction band of the ternary compound emitter prewell with respect to bulk GaSb. By integration of a quaternary absorption layer, RTDs photodetectors with cut-off wavelengths up to 3 μm have been realized.
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Fabian Hartmann, Andreas Pfenning, Georg Knebl, Robert Weih, Andreas Bader, Monika Emmerling, Martin Kamp, Sven Höfling, Lukas Worschech, "Antimonide-based resonant tunneling photodetectors for mid infrared wavelength light detection", Proc. SPIE 10403, Infrared Remote Sensing and Instrumentation XXV, 1040306 (30 August 2017); doi: 10.1117/12.2274917; https://doi.org/10.1117/12.2274917


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