30 August 2017 Theoretical simulation of mid-wave type-II InAs/GaSb superlattice interband cascade photodetector
Author Affiliations +
Proceedings Volume 10404, Infrared Sensors, Devices, and Applications VII; 1040404 (2017); doi: 10.1117/12.2273421
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States
Abstract
In this paper interband cascade type-II InAs/GaSb superlattice photodetector in temperature range from 225 K to 300 K is investigated. The article concerns the theoretical simulations of the detectivity characteristics of cascade detector with equal absorber regions in each stage. The obtained theoretical characteristics are comparable to experimentally measured, assuming that transport in absorber is determined by dynamics of intrinsic carriers. The greatest fit is observed for overlap values which increase with decreasing temperature form 0.175 eV for 225 K to 0.132 eV for 300 K.
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Conference Presentation
Klaudia Hackiewicz, Tetina Manyk, Piotr Martyniuk, Jarosław Rutkowski, "Theoretical simulation of mid-wave type-II InAs/GaSb superlattice interband cascade photodetector", Proc. SPIE 10404, Infrared Sensors, Devices, and Applications VII, 1040404 (30 August 2017); doi: 10.1117/12.2273421; http://dx.doi.org/10.1117/12.2273421
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KEYWORDS
Sensors

Mid-IR

Absorption

Diffusion

Gallium antimonide

Infrared detectors

Photodetectors

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