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19 September 2017 Effects of 4.5 MeV and 63 MeV proton irradiation on carrier lifetime of InAs/InAsSb type-II superlattices (Conference Presentation)
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Abstract
Type-II strained-layer superlattices (T2SLs) are receiving increased interest as mid-wave infrared (MWIR) and long-wave infrared detector absorbers due to their potential Auger suppression and ability to be integrated into complex device structures. Although T2SLs show promise for use as infrared detectors, further investigation into the effects of high energy particle radiation is necessary for space-based applications. In this presentation, the effects of both 4.5 MeV and 63 MeV proton radiation on the carrier lifetime of MWIR InAs/InAsSb T2SLs will be shown. The 63 MeV proton radiation study will focus on the carrier lifetime of MWIR InAs/InAsSb T2SL samples of varying donor density. These results reveal a Shockley-Read-Hall (SRH) lifetime associated with a radiation induced defect level, which is not dependent on the donor density of the T2SL. Using 4.5 MeV proton radiation, the dependence of carrier lifetime on relative trap density in MWIR T2SLs samples is studied by varying the particle fluence. A comparison of these two radiation studies shows similar lifetime effects that will be discussed in detail. These results give insight into the viability of Ga-free T2SLs for space applications.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emil A. Kadlec, Michael D. Goldflam, Edward Bielejec, Jin K. Kim, Benjamin V. Olson, John F. Klem, Samuel D. Hawkins, Johnathan Moussa, Peter A. Schultz, Christian P. Morath, Geoffery D. Jenkins, Vincent M. Cowan, and Eric A. Shaner "Effects of 4.5 MeV and 63 MeV proton irradiation on carrier lifetime of InAs/InAsSb type-II superlattices (Conference Presentation)", Proc. SPIE 10404, Infrared Sensors, Devices, and Applications VII, 1040405 (19 September 2017); https://doi.org/10.1117/12.2274377
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