Extended wavelength InGaAs SWIR FPAs with high performance

Xue Li; Tao Li; Chunlei Yu; Hengjing Tang; Shuangyan Deng; Xiumei Shao; Yonggang Zhang; Haimei Gong

doi:10.1117/12.2273550

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7 September 2017 Extended wavelength InGaAs SWIR FPAs with high performance

Xue Li, Tao Li, Chunlei Yu, Hengjing Tang, Shuangyan Deng, Xiumei Shao, Yonggang Zhang, Haimei Gong

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Proceedings Volume 10404, Infrared Sensors, Devices, and Applications VII; 104040C (2017) https://doi.org/10.1117/12.2273550
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States

Abstract

The extended InGaAs short wavelength infrared (SWIR) detector covers 1.0-2.5 μm wavelength, which plays an important role in weather forecast, resource observation, low light level systems, and astronomical observation and so on. In order to fabricate the high performance extended InGaAs detector, materials structure and parameters were characterized with Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM), the spreading of minority carriers and lattice quality were obtained. Mesa etching process, etching damage restoration technique and low temperature passivation technique were used in the fabrication of the extended InGaAs detector. The improvement of material structure and device process was studied by fabricating and measuring different perimeter-to-area (P/A) photodiodes and singledevice, respectively. The dark current density of the extended InGaAs detector obviously was reduced, about 2 nA/cm² at 170 K. The 512×256 FPAs were fabricated, the peak detectivity and the quantum efficiency of which are 5×10¹¹ cmHz^1/2/W and 80%, respectively. The staring image yielded of the 512×256 FPAs is shown, which demonstrates very good imaging quality.

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Xue Li, Tao Li, Chunlei Yu, Hengjing Tang, Shuangyan Deng, Xiumei Shao, Yonggang Zhang, and Haimei Gong "Extended wavelength InGaAs SWIR FPAs with high performance", Proc. SPIE 10404, Infrared Sensors, Devices, and Applications VII, 104040C (7 September 2017); https://doi.org/10.1117/12.2273550

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