30 August 2017 640x512 pixel InGaAs FPAs for short-wave infrared and visible light imaging
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Abstract
The spectral irradiance of moonlight and air glow is mainly in the wavelength region from visible to short-wave infrared (SWIR) band. The imaging over the wavelength range of visible to SWIR is of great significance for applications such as civil safety, night vision, and agricultural sorting. In this paper, 640×512 visible-SWIR InGaAs focal plane arrays (FPAs) were studied for night vision and SWIR imaging. A special epitaxial wafer structure with etch-stop layer was designed and developed. Planar-type 640×512 InGaAs detector arrays were fabricated. The photosensitive arrays were bonded with readout circuit through Indium bumps by flip-chip process. Then, the InP substrate was removed by mechanical thinning and chemical wet etching. The visible irradiance can reach InGaAs absorption layer and then to be detected. As a result, the detection spectrum of the InGaAs FPAs has been extended toward visible spectrum from 0.5μm to 1.7μm. The quantum efficiency is approximately 15% at 0.5μm, 30% at 0.7μm, 50% at 0.8μm, 90% at 1.55μm. The average peak detectivity is higher than 2×1012 cm·Hz1/2/W at room temperature with an integrated time of 10 ms. The Visible-SWIR InGaAs FPAs were applied to an imaging system for SWIR and visible light imaging.
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Xiumei Shao, Xiumei Shao, Bo Yang, Bo Yang, Songlei Huang, Songlei Huang, Yang Wei, Yang Wei, Xue Li, Xue Li, Xianliang Zhu, Xianliang Zhu, Tao Li, Tao Li, Yu Chen, Yu Chen, Haimei Gong, Haimei Gong, } "640x512 pixel InGaAs FPAs for short-wave infrared and visible light imaging", Proc. SPIE 10404, Infrared Sensors, Devices, and Applications VII, 104040D (30 August 2017); doi: 10.1117/12.2273551; https://doi.org/10.1117/12.2273551
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