1 June 1989 Bipolar Transistor Fabrication Using Gas Immersion Laser Doping
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Abstract
Gas. Immersion Laser Doping (GILD) is presented as a powerful process to fabricate emitter and base regions in narrow-base bipolar transistors. Characterization of maximum melt depth versus silicon surface melt time is performed. Results of this characterization demonstrate that surface melt time provides an accurate in-situ measurement of junction depth. The GILD process is then used to fabricate the emitter and active-base regions in simple bipolar transistors. Base widths ranging from 700Å to 1200Å are achieved. The transistors exhibit good electrical behavior with maximum forward current gains greater than 50.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kurt H. Weiner, Kurt H. Weiner, Thomas W. Sigmon, Thomas W. Sigmon, } "Bipolar Transistor Fabrication Using Gas Immersion Laser Doping", Proc. SPIE 1041, Metal Vapor Laser Technology and Applications, (1 June 1989); doi: 10.1117/12.951251; https://doi.org/10.1117/12.951251
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