1 June 1989 Bipolar Transistor Fabrication Using Gas Immersion Laser Doping
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Gas. Immersion Laser Doping (GILD) is presented as a powerful process to fabricate emitter and base regions in narrow-base bipolar transistors. Characterization of maximum melt depth versus silicon surface melt time is performed. Results of this characterization demonstrate that surface melt time provides an accurate in-situ measurement of junction depth. The GILD process is then used to fabricate the emitter and active-base regions in simple bipolar transistors. Base widths ranging from 700Å to 1200Å are achieved. The transistors exhibit good electrical behavior with maximum forward current gains greater than 50.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kurt H. Weiner, Kurt H. Weiner, Thomas W. Sigmon, Thomas W. Sigmon, "Bipolar Transistor Fabrication Using Gas Immersion Laser Doping", Proc. SPIE 1041, Metal Vapor Laser Technology and Applications, (1 June 1989); doi: 10.1117/12.951251; https://doi.org/10.1117/12.951251


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