1 June 1989 Deep Blue And Ultraviolet E-Beam Pumped Semiconductor Lasers
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Semiconductor compounds ZnS_Sei , and ZnO are used as an active medium for e-beam pumped semiconductor lasers (BBPSVIT The plates of these compouds of 2-3 cm in diameter and about 20-30 um thickness with covered mirrors surfaces form the optical cavity of a 2-D scannable laser. The e-beam energy being 75 keV, the maximum power reached 5 Watts at the wavelength λ = 375 nm (ZnO BBPSL). With the use of these compounds the generation in the range 330-400 nm has been obtained.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Nasibov, A. Nasibov, V. Kozlovaky, V. Kozlovaky, Ya. Skasyraky, Ya. Skasyraky, } "Deep Blue And Ultraviolet E-Beam Pumped Semiconductor Lasers", Proc. SPIE 1041, Metal Vapor Laser Technology and Applications, (1 June 1989); doi: 10.1117/12.951255; https://doi.org/10.1117/12.951255

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