1 June 1989 Deep Blue And Ultraviolet E-Beam Pumped Semiconductor Lasers
Author Affiliations +
Abstract
Semiconductor compounds ZnS_Sei , and ZnO are used as an active medium for e-beam pumped semiconductor lasers (BBPSVIT The plates of these compouds of 2-3 cm in diameter and about 20-30 um thickness with covered mirrors surfaces form the optical cavity of a 2-D scannable laser. The e-beam energy being 75 keV, the maximum power reached 5 Watts at the wavelength λ = 375 nm (ZnO BBPSL). With the use of these compounds the generation in the range 330-400 nm has been obtained.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Nasibov, A. Nasibov, V. Kozlovaky, V. Kozlovaky, Ya. Skasyraky, Ya. Skasyraky, "Deep Blue And Ultraviolet E-Beam Pumped Semiconductor Lasers", Proc. SPIE 1041, Metal Vapor Laser Technology and Applications, (1 June 1989); doi: 10.1117/12.951255; https://doi.org/10.1117/12.951255
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT

Energy-transfer-based fiber optic metal-ion biosensor
Proceedings of SPIE (May 07 1995)
Spot Welding With Nd Lasers
Proceedings of SPIE (July 06 1986)
Latest progress in high power VECSELs
Proceedings of SPIE (January 24 2011)
Analysis of the output impulse of PCSS triggered by femto...
Proceedings of SPIE (January 10 2007)
Closed-loop design of a semiconductor laser
Proceedings of SPIE (February 08 2007)

Back to Top