Characterisation results of the CMOS VISNIR spectral band detector for the METimage instrument

Jérôme Pratlong; Frank Schmuelling; Victor Benitez; Michel Breart De Boisanger; Michael Skegg; Robert Simpson; Steve Bowring; Natalie Krzizok

doi:10.1117/12.2277947

Translator Disclaimer

29 September 2017 Characterisation results of the CMOS VISNIR spectral band detector for the METimage instrument

Jérôme Pratlong, Frank Schmuelling, Victor Benitez, Michel Breart De Boisanger, Michael Skegg, Robert Simpson, Steve Bowring, Natalie Krzizok

Author Affiliations +

Proceedings Volume 10423, Sensors, Systems, and Next-Generation Satellites XXI; 104231J (2017) https://doi.org/10.1117/12.2277947
Event: SPIE Remote Sensing, 2017, Warsaw, Poland

Abstract

The METimage instrument is part of the EPS-SG (EUMETSAT Polar System Second Generation) program. It will be situated on the MetOp-SG platform which in operation has an objective of collecting data for meteorology and climate monitoring as well as their forecasting. Teledyne e2v has developed and characterised the CMOS VISNIR detector flight module part of the METimage instrument. This paper will focus on the silicon results obtained from the CMOS VISNIR detector flight model. The detector is a large multi-linear device composed of 7 spectral bands covering a wavelength range from 428 nm to 923 nm (some bands are placed twice and added together to enhance the signal-to-noise performance). This detector uses a 4T pixel, with a size of 250μm square, presenting challenges to achieve good charge transfer efficiency with high conversion factor and good linearity for signal levels up to 2M electrons and with high line rates. Low noise has been achieved using correlated double sampling to suppress the read-out noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. The photodiode occupies a significant fraction of the large pixel area. This makes it possible to meet the detection efficiency when front illuminated. A thicker than standard epitaxial silicon is used to improve NIR response. However, the dielectric stack on top of the sensor produces Fabry-Perot étalon effects, which are problematic for narrow band illumination as this causes the detection efficiency to vary significantly over a small wavelength range. In order to reduce this effect and to meet the specification, the silicon manufacturing process has been modified. The flight model will have black coating deposited between each spectral channel, onto the active silicon regions.

Citation Download Citation

Jérôme Pratlong, Frank Schmuelling, Victor Benitez, Michel Breart De Boisanger, Michael Skegg, Robert Simpson, Steve Bowring, and Natalie Krzizok "Characterisation results of the CMOS VISNIR spectral band detector for the METimage instrument", Proc. SPIE 10423, Sensors, Systems, and Next-Generation Satellites XXI, 104231J (29 September 2017); https://doi.org/10.1117/12.2277947

ACCESS THE FULL ARTICLE