29 September 2017 Measuring Te inclusion uniformity over large areas for CdTe/CZT imaging and spectrometry sensors
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Abstract
CdTe and CZT materials are technologies for gamma and x-ray imaging for applications in industry, homeland security, defense, space, medical, and astrophysics. There remain challenges in uniformity over large detector areas (50~75 mm) due to a combination of material purity, handling, growth process, grown in defects, doping/compensation, and metal contacts/surface states. The influence of these various factors has yet to be explored at the large substrate level required for devices with higher resolution both spatially and spectroscopically. In this study, we looked at how the crystal growth processes affect the size and density distributions of microscopic Te inclusion defects. We were able to grow single crystals as large as 75 mm in diameter and spatially characterize three-dimensional defects and map the uniformity using IR microscopy. We report on the pattern of observed defects within wafers and its relation to instabilities at the crystal growth interface.
Conference Presentation
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Joe Bolke, Joe Bolke, Kathryn O'Brien, Kathryn O'Brien, Peter Wall, Peter Wall, Mike Spicer, Mike Spicer, Guillaume Gélinas, Guillaume Gélinas, Jean-Nicolas Beaudry, Jean-Nicolas Beaudry, W. Brock Alexander, W. Brock Alexander, } "Measuring Te inclusion uniformity over large areas for CdTe/CZT imaging and spectrometry sensors", Proc. SPIE 10423, Sensors, Systems, and Next-Generation Satellites XXI, 104231M (29 September 2017); doi: 10.1117/12.2278584; https://doi.org/10.1117/12.2278584
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