22 June 1989 Computer Modeling Of GRIN-SCH-SQW Diode Lasers
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Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976367
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
A computer model for the optical gain of graded-index, separate-confinement-heterostructure, single-quantum-well (GRIN-SCH-SQW) Alx Ga1-xAs diode lasers is presented, and compared with experimental data. The model combines many individual features not heretofore included together, and gives good agreement with gain vs current density data for two different structure variations. In addition, the threshold temperature dependence agrees well with data for typical laser conditions, the observed high-gain discontinuity in T° vs temperature is explained, and new predictions are made concerning T° discontinuities at gain cross-overs.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. R. Chinn, P. S. Zory, and A. R. Reisinger "Computer Modeling Of GRIN-SCH-SQW Diode Lasers", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976367; https://doi.org/10.1117/12.976367

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