22 June 1989 Extremely Low Threshold InGaAsP DFB Laser Diode By The MOCVD/LPE
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Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976348
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
An extremely low threshold InGaAsP DFB laser diode has been developed by the MOCVD and LPE hybrid process. The threshold current of 3.1mA is the lowest value among InGaAsP laser diodes so far reported including those of the conventional Fabry Perot type. Using this low threshold DFB laser, 1 Gbit/s RZ zero bias modulation has been demonstrated.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Kakimoto, K. Ikeda, H. Namizaki, W. Susaki, and K. Shibayama "Extremely Low Threshold InGaAsP DFB Laser Diode By The MOCVD/LPE", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976348; https://doi.org/10.1117/12.976348

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