22 June 1989 High Frequency Characteristics Of 1.3 µm Lasers
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Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976385
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
A review of high frequency InGaAsP/InP laser structures is presented. The performance of these devices is analyzed based on a rate equations model. The effects of packaging and device parasitics on high speed modulation are also considered through a circuit configuration. The model is used to compare the relative advantages of the main high frequency laser structures in order to maximize the obtainable modulation bandwidth. The characteristics of buried crescent lasers with semi-insulating current-blocking layers are highlighted. A 3-dB direct modulation bandwidth of 11 GHz together with 42-mW output power has been achieved with this device.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Renner, W. H. Cheng, J. Pooladdej, A.. Appelbaum, K. L. Hess, and S. W. Zehr "High Frequency Characteristics Of 1.3 µm Lasers", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976385; https://doi.org/10.1117/12.976385

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