22 June 1989 Laser-Patterned Desorption Of GaAs In An Inverted Metalorganic Chemical Vapor Deposition Reactor
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Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976351
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
A new laser-assisted processing technique for thinning or removing GaAs and AlGaAs quantum well (QW) layers during epitaxial growth is demonstrated. In the particular application reported here, epitaxial growth of an optoelectronic device structure is interrupted while the QW active layer is locally heated with superimposed Ar+ and Nd:YAG laser beams. The evaporation rate of the GaAs or AlGaAs is greatly increased by the optically induced heating, resulting in a local thinning of the QW. After exposure, epitaxial growth is resumed, burying the patterned QW within the crystal. Transmission electron microscopy and photoluminescence are used to characterize the spatial variation of the energy bandgap. Broad area and high power laser diodes are fabricated from the modified region of the wafer. As expected, the wavelength of operation varies from laser to laser, consistent with the spatial variation in the energy bandgap.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. E. Epler, J. E. Epler, D. W. Treat, D. W. Treat, H. F. Chung, H. F. Chung, T. L. Paoli, T. L. Paoli, } "Laser-Patterned Desorption Of GaAs In An Inverted Metalorganic Chemical Vapor Deposition Reactor", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976351; https://doi.org/10.1117/12.976351

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