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22 June 1989 Optical Cavity Design For Wavelength-Resonant Surface-Emitting Semiconductor Lasers
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Proceedings Volume 1043, Laser Diode Technology and Applications; (1989)
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
Recently, we have demonstrated a novel surface-emitting semiconductor laser with a wavelength-resonant periodic gain medium, which has performed significantly better than conventional double-heterostructure and multiple-quantum-well vertical-cavity devices. The gain medium consists of a series of half-wave-spaced quantum wells which provides enhanced longitudinal gain at a selected wavelength in the vertical direction, reducing transverse amplified spontaneous emission, lowering the threshold and raising the quantum efficiency. However, because the antinodes of the standing-wave optical field must coincide with the quantum wells, considerable attention must be devoted to designing the vertical cavity. Here we examine various cavity configurations in which the wavelength-resonant periodic gain medium has been incorporated. Multilayer epitaxial reflectors are particularly attractive for fabricating monolithic vertical-cavity surface-emitting lasers.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. R.J. Brueck, M. Y.A. Raja, M. Osinski, C. F. Schaus, M. Mahbobzadeh, J. G. McInerney, and K. J. Dahlhauser "Optical Cavity Design For Wavelength-Resonant Surface-Emitting Semiconductor Lasers", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989);

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