22 June 1989 Quantum Well Ridge Waveguide Lasers Optimised For High Power Single Spatial Mode Applications
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Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976354
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
High power, single spatial mode (A1Ga)As/GaAs quantum well lasers have been fabricated which combine very high power operation with a low threshold current. Optimisation of the performance of these lasers has been aided by modelling the electron-photon interaction (hole-burning) at high drive levels. Single, element ridge waveguide lasers have been fabricated using a combination of wet and dry etching techniques. These structures combine a high continuous wave burn-off power density of 9.0 MW/cm (non facet-coated) with a high single spatial mode purity. Single spatial mode powers in excess of 128mW have been measured on non-coated devices. Performance improvements have been obtained by facet coating giving zero-order mode powers of 175mW, burn-off power levels in excess of 300 mW and slope efficiencies of 0.84mW/mA.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. R. Daniel, D. Buckley, and B. Garrett "Quantum Well Ridge Waveguide Lasers Optimised For High Power Single Spatial Mode Applications", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976354; https://doi.org/10.1117/12.976354

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