22 June 1989 Quantum Well Ridge Waveguide Lasers Optimised For High Power Single Spatial Mode Applications
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Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976354
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
High power, single spatial mode (A1Ga)As/GaAs quantum well lasers have been fabricated which combine very high power operation with a low threshold current. Optimisation of the performance of these lasers has been aided by modelling the electron-photon interaction (hole-burning) at high drive levels. Single, element ridge waveguide lasers have been fabricated using a combination of wet and dry etching techniques. These structures combine a high continuous wave burn-off power density of 9.0 MW/cm (non facet-coated) with a high single spatial mode purity. Single spatial mode powers in excess of 128mW have been measured on non-coated devices. Performance improvements have been obtained by facet coating giving zero-order mode powers of 175mW, burn-off power levels in excess of 300 mW and slope efficiencies of 0.84mW/mA.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. R. Daniel, D. R. Daniel, D. Buckley, D. Buckley, B. Garrett, B. Garrett, } "Quantum Well Ridge Waveguide Lasers Optimised For High Power Single Spatial Mode Applications", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976354; https://doi.org/10.1117/12.976354

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