22 June 1989 Two-Dimensional Surface-Emitting Arrays Of GaAs/AlGaAs Diode Lasers
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Proceedings Volume 1043, Laser Diode Technology and Applications; (1989); doi: 10.1117/12.976359
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
Abstract
Three approaches to fabricating two-dimensional surface-emitting GaAs/AlGaAs diode laser arrays are discussed: a hybrid approach in which linear arrays of edge-emitting lasers with cleaved end facets are mounted on microchanneled Si heatsinks with integral 45° deflecting mirrors, a monolithic approach in which edge-emitting lasers are fabricated with deflecting mirrors adjacent to both end facets of each laser, and a monolithic approach in which horizontal-cavity lasers are fabricated with intracavity 45° deflecting mirrors. In both monolithic approaches, all the laser facets and deflecting mirrors are fabricated by ion-beam-assisted etching.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Donnelly, K. Rauschenbach, C. A. Wang, W. D. Goodhue, R. J. Bailey, "Two-Dimensional Surface-Emitting Arrays Of GaAs/AlGaAs Diode Lasers", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976359; https://doi.org/10.1117/12.976359
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KEYWORDS
Mirrors

Semiconductor lasers

Etching

Silicon

Gallium arsenide

Heatsinks

Quantum efficiency

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