6 October 2017 InAs/GaSb type-II superlattices versus HgCdTe ternary alloys: future prospect
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Abstract
InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cutoff wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in Shockley-Read lifetimes. It is predicted that since the future IR systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long Shockley-Read lifetime will be required. Since T2SLs are much resisted in attempts to improve its SR lifetime, currently the only material that meets this requirement is HgCdTe.

Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability – the so-called “ibility” advantages.
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A. Rogalski, "InAs/GaSb type-II superlattices versus HgCdTe ternary alloys: future prospect", Proc. SPIE 10433, Electro-Optical and Infrared Systems: Technology and Applications XIV, 104330U (6 October 2017); doi: 10.1117/12.2279572; https://doi.org/10.1117/12.2279572
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